発表事例(融液および溶液からの結晶成長解析)|結晶成長やデバイスのシミュレーション【STRJapan株式会社】

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融液および溶液からの結晶成長解析
題名 表者 発表先 結晶名
Influence of Coriolis force on thermal convection and impurity segregation during crystal growth under microgravity
E.N. Kolesnikova, et al
Journal of Crystal Growth, 180/3-4 (1997) pp. 578-586
-
Modelling analysis of oxygen transport during Czochralski growth of silicon crystals
Y.E. Egrov, et al
Mat. Res. Soc. Symp. Proc., vol.490, MRS, Pennsylvania, 1998, p.181
Silicon
Numerical modeling of Czochralski silicon crystal growth
V.V. Kalaev, et al
ECCOMAS-2000, September 11-14, 2000, Barcelona, Spain, CD-ROM Proceeding, N677 (9 pages)
Silicon
Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt-crystal interface
I.Y. Evstratov, et al
Microelectronic Engineering, 56/1-2 (2001) pp. 139-142
Silicon
Modeling analysis of unsteady three-dimensional turbulent melt flow during Czochralski growth of Si crystals
I.Y. Evstratov, et al
Journal of Crystal Growth, 230 (2001) pp. 22-29
Silicon
Modeling of turbulent melt convection during Czochralski bulk crystal growth
V.V. Kalaev, et al
"TSFP-2, Stockholm, Sweden, June 27-29, 2001, Proceedings, Vol. 3, pp. 381-386
/Journal of Turbulence, vol. 3 (2002) 013, http://jot.iop.org/ (12 pages)"
Silicon
Modeling of impurity transport and point defect formation during Cz Si crystal growth
V.V. Kalaev, et al
Solid State Phenomena 82-84 (2002) pp. 41-46
Silicon
Numerical study of 3D unsteady melt convection during industrial-scale CZ Si-crystal growth
I.Y. Evstratov, et al
Journal of Crystal Growth, 237–239 (2002) 1757–1761
Silicon
Large Eddy Simulation of Melt Convection during Czochralski Crystal Growth
V.V. Kalaev, et al
Advances in Turbulence IX, Proceedings of the Ninth European Turbulence Conference, Southampton, U.K., July 2-5, 2002, pp. 207-210
Silicon
Hybrid LES/RANS simulation of melt convection during crystal growth
V.V. Kalaev, et al
"Engineering Turbulence Modelling and Experiments 5, Edited by W. Rodi and N. Fueyo, Elsevier
/The 5th International Symposium on Engineering Turbulence Modelling and Measurements, Mallorca, Spain, 16-18 September, 2002, Proceedings, pp. 337-346"
Silicon
Numerical solution of axisymmetric radiative transfer problems in arbitrary domains using the characteristic method
S.A. Rukolaine, et al
J. Quantitative Spectroscopy and Radiative Transfer, 73/2-5 (2002), pp. 205-217
-
Global analysis of heat transfer in growing BGO crystals (Bi4Ge3O12) by low-gradient Czochralski method
I.Y. Evstratov, et al
Journal of Crystal Growth 235 (2002) 371–376
Oxide
Gas flow effect on global heat transport and melt convection in Czochralski silicon growth
V.V. Kalaev, et al
Journal of Crystal Growth, 249/1-2 (2003) pp. 87-99
Silicon
Calculation of bulk defects in CZ Si growth: impact of melt turbulent fluctuations
V.V. Kalaev, et al
Journal of Crystal Growth, 250/1-2 (2003) pp. 203-208
Silicon
Analysis of magnetic field effect on 3D melt flow in CZ Si growth
N.G. Ivanov, et al
Journal of Crystal Growth, 250/1-2 (2003) pp. 183-188
Silicon
Prediction of the melt/crystal interface geometry in liquid encapsulated Czochralski growth of InP bulk crystals
E.N.Bystrova, et al
Journal of Crystal Growth, 250/1-2 (2003) pp. 189-194
V-X
Modeling analysis of vCZ growth of GaAs bulk crystals using 3D unsteady melt flow simulations
E.V.Yakovlev, et al
Journal of Crystal Growth, 250/1-2 (2003) pp. 195-202
V-X
Global heat and mass transfer in vapor pressure controlled Czochralski growth of GaAs crystals
E.V. Yakovlev, et al
Journal of Crystal Growth, 252/1-3 (2003) pp. 26-36
V-X
Prediction of bulk defects in CZ Si crystals using 3D unsteady calculations of melt convection
V.V. Kalaev, et al
Materials Science in Semiconductor Processing, 5/4-5 (2003) pp. 369-373
Silicon
Modeling Analysis of Liquid Encapsulated Czochralski Growth of GaAs and InP Crystals
E.V.Yakovlev, et al
Crystal Research and Technology, 38, No. 6 (2003) pp. 506-514
V-X
3D unsteady numerical analysis of conjugate heat transport and turbulent/laminar flows in LEC growth of GaAs crystals
O.V. Smirnova, et al
International Journal of Heat and Mass Transfer 47 (2004) pp. 363-371
V-X
Modeling of point defect formation in silicon monocrystals
V. A. Zabelin, et al
Microelectronic Engineering 69 (2003) pp. 641-645
Silicon
Simulation of facet formation on the crystallization front in oxide crystals growth by Czochralski technique
O.N. Budenkova
Fifth International Conference "Single Crystal Growth and Heat&Mass Transfer", Obninsk-2003, Proceedings, pp.613-618
Oxide
Numerical Analysis of Heat Transfer and Flows in Liquid Encapsulated CZ Growth of GaAs Crystals
O.V. Smirnova, et al
Fifth International Conference "Single Crystal Growth and Heat&Mass Transfer", Obninsk-2003, Proceedings, pp.677-681
V-X
3D unsteady numerical simulation of heat and mass transfer during CZ Si crystal growth
K.V. Khodosevitch, et al
Fifth International Conference "Single Crystal Growth and Heat&Mass Transfer", Obninsk-2003, Proceedings, pp.696-702
Silicon
Variations of solid–liquid interface in the BGO low thermal gradients Cz growth for diffuse and specular crystal side surface
V.S. Yuferev, et al
Journal of Crystal Growth, 253 (2003) 383–397
Oxide
Parallel Simulation of Czochralski crystal growth
D.P.Lukanin, et al
Lecture Notes in Computer Science, Vol. 3019 (2004) pp. 469 - 474
Silicon
Advances in the simulation of heat transfer and prediction of the melt-crystal interface shape in silicon CZ growth
D.P.Lukanin, et al
Journal of Crystal Growth, 266/1-3 (2004) pp. 20 - 27
Silicon
3D Computations of Melt Convection and Crystallization Front Geometry during VCz GaAs Growth
O.V. Smirnova, et al
Journal of Crystal Growth, 266 (2004) pp 67–73
V-X
Simulation of Heat Transfer and Melt Flow in Czochralski Growth of Si1-xGex Crystals
O.V. Smirnova, et al
Journal of Crystal Growth, 266 (2004) pp. 74–80
Cz_SiGe
Effect of internal radiation on the crystal-melt interface shape in Czochralski oxide growth
O.N.Budenkova
Journal of Crystal Growth, 266 (2004) pp. 96–102
Oxide
Simulation of global heat transfer in the Czochralski process for BGO sillenite crystals
O.N. Budenkova
Journal of Crystal Growth, 266 (2004) pp. 103–108
Oxide
Modeling of Czochralski growth of Si crystals in industrial systems with and without magnetic field
V.V. Kalaev, et al
The 4th International Symposium on Advanced Science and Technology of Silicon Materials, November 22-26, 2004, Kona, Hawaii, The Japan Society for the Promotion of Science, Proceedings, pp. 32-37
Silicon
2D simulation of carbon transport at the growth of GaAs crystals by liquid encapsulated Czochralski techniques
E.N. Bystrova, et al
Journal of Crystal Growth, 275 (2005), pp. 507-514
V-X
Peculiarities of the temperature fields in semitransparent oxide crystals being grown by Cz technique
O.N. Budenkova, et al
Journal of Crystal Growth, 275 (2005) e727–e732
Cz_Ky_semi
Effect of heat shield on the shape of the solid–liquid interface and temperature field in the BGO-eulithine LTG Cz growth
M.G. Vasiliev, et al
Journal of Crystal Growth 275 (2005) e745–e750
Oxide
Modelling of Si Transport in Melt during Cz Ge1-xSix Growth
O. Smirnova, et al
Sixth International Conference "Single Crystal Growth and Heat&Mass Transfer", Obninsk-2005, Proceedings, pp.716-722 (in Russian)
SiGe
Effect of the crystal electrical conductivity on melt convection in CZSi crystal growth in external magnetic field
-
Sixth International Conference "Single Crystal Growth and Heat&Mass Transfer", Obninsk-2005, Proceedings, pp.725-731(in Russian)
Silicon
Effect of the shouldering angle on the shape of the solid–liquid interface and temperature fields in sillenite-type crystals growth
V. Bermudez, et al
Journal of Crystal Growth 279 (2005) 82–87
Oxide
Numerical investigation of crucible rotation effect on crystallization rate behavior during Czochralski growth of Si1-xGex crystals
O.V. Smirnova, et al
Journal of Crystal Growth, 287-2 (2006) 281-286
SiGe
3D unsteady analysis of gas turbulent convection during HPLEC InP growth
E.N. Bystrova, et al
Journal of Crystal Growth, 287-2 (2006) 275-280
V-X
3D numerical simulation of heat transfer during horizontal direct crystallization of corundum single crystals
M.A. Lukanina, et al
Journal of Crystal Growth, 287-2 (2006) 330-334
Cz_Ky_semi
Thermal conditions for large alkali-halide crystal growth by the continuous feed method
V.V. Vasilyev, et al
Optical Materials 30 (2007) 109–112
Cz_Ky_semi
Numerical analysis of sapphire crystal growth by the Kyropoulos technique
S.E. Demina, et al
Optical Materials 30 (2007) 62–65
Cz_Ky_semi
Three-dimensional unsteady modeling analysis of silicon transport in melt during Cz growth of Ge1_xSix bulk crystals
O.V. Smirnova, et al
Journal of Crystal Growth, 303 (2007) 141–145
Cz_SiGe
Combined effect of DC magnetic .fields and free surface stresses on the melt flow and crystallization front formation during 400mm diameter Si Cz crystal growth
V.V. Kalaev
Journal of Crystal Growth, 303 (2007) 203-210
Silicon
Analysis of 3D unsteady melt flow and crystallization front geometry during a casting process for silicon solar cells
A.T. Kuliev, et al
Journal of Crystal Growth, 303 (2007) 236-240
Silicon
Effect of internal radiation on the solid–liquid interface shape in low and high thermal gradient Czochralski oxide growth
O.N. Budenkova, et al
Journal of Crystal Growth, 303 (2007) 156–160
Oxide
Development of a model for on-line control of crystal growth by the AHP method
M.A. Gonik, et al
Journal of Crystal Growth, 303, Issue 1 (2007) 180-186
Ge,CsI
Optimization of Furnace Design and Growth Parameters for Si Cz Growth, Using Numerical Simulation
O.V. Smirnova, et al
Journal of Crystal Growth, 310 (2008) 2185–2191
Silicon
3D unsteady analysis of melt flow and segregation during EFG Si crystal growth
O.V. Smirnova, et al
Journal of Crystal Growth, 310 (2008) 2209–2214
EFG_Si
Development of oxygen transport model in Czochralski growth of silicon crystals
A.D. Smirnov, et al
Journal of Crystal Growth, 310 (2008) 2970– 2976
Silicon
Modelling of Czochralski Growth of Large Silicon Crystals
V.V. Kalaev, et al
Chapter 6 in Crystal Growth Technology, edited by H. J. Scheel and P. Capper, WILEY-VCH, 2008
Silicon
Modelling of Semitransparent Bulk Crystal Growth
V.V. Kalaev, et al
Chapter 8 in Crystal Growth Technology, edited by H. J. Scheel and P. Capper, WILEY-VCH, 2008
Oxide
Use of numerical simulation for growing high-quality sapphire crystals by the Kyropoulos method
S.E. Demina, et al
Journal of Crystal Growth, 310 (2008) 1443–1447
Oxide
Investigation of the Variations in the Crystallization Front Shape during Growth of Gadolinium Gallium and Terbium Gallium Crystals by the Czochralski Method
O.N. Budenkova, et al
Crystallography Reports, 2008, Vol. 53, No. 7, 1181–1190
Oxide
Analysis of impurity transport and deposition processes on the furnace elements during Cz silicon growth
A.D. Smirnov, et al
Journal of Crystal Growth, 311 (2009) 829-832
Silicon
Computer modeling of diamond single crystal growth by the temperature gradient method in carbon-solvent system
S.E. Demina, et al
Journal of Crystal Growth, 311 (2009) 680-683
Diamond
Heat transfer and convection in Czochralski growth of large BGO Crystals
K. Mazaev, et al
Journal of Crystal Growth, 311 (2009) 3933-3937
Oxide
CRYSTALLINE FRONT CONTROL OF GROWING MULTICRYSTALLINE SI INGOTS DURING THE DIRECTIONAL SOLIDIFICATION PROCESS
Y. Y. Teng, et al
PVSEC18 Jan 19-23, (2009)
Silicon
Optimization of crystal growth by changes of flow guide, radiation shield and sidewall insulation in Cz Si furnace
Wenjia Su, et al
Journal of Crystal Growth, 312 (2010) 495-501
Silicon
Mathematical Simulation of Electromagnetic Stirring of Liquid Steel in a DC Arc Furnace
S.A. Smirnov, et al
High Temperature, 2010, Vol. 48, No. 1, 68–76.
-
3D unsteady computer modeling of industrial scale Ky and Cz sapphire crystal growth
S.E. Demina, et al
Journal of Crystal Growth, 320 (2011) 23-27
Oxide
Liquid flow in a cubic cavity generated by gas motion along the free surface
V.V. Kalaev, et al
International Journal of Heat and Mass Transfer 55 (2012) 5214-5221
-
DS 法(キャスティング法)による多結晶シリコン成長解析
STR Group
http://www.semitech.us/products/CGSim/
DS_of_multi-Si/
Silicon
Cz 法(チョクラルスキー法)による100mm直径シリコン結晶成長解析
STR Group
http://www.semitech.us/products/CGSim/
100_mm_CZ_Si/
Silicon
Cz法(チョクラルスキー法)による300mm直径シリコン成長結晶成長解析
STR Group
http://www.semitech.us/products/CGSim/
300_mm_CZ_Si/
Silicon
MCz法(磁場印可チョクラルスキー法)による400mm直径 シリコン結晶成長解析
STR Group
http://www.semitech.us/products/CGSim/
400_mm_CZ_Si/
Silicon
Ky法(キロポーラス法)によるサファイア(Al2O3)結晶成長解析
STR Group
http://www.semitech.us/products/CGSim/
Kyropoulos_Sapphire/
Oxide
VCz法(蒸気圧制御チョクラルスキー法)による100mm直径GaAs結晶成長解析
STR Group
http://www.semitech.us/products/CGSim/
100_mm_VCz_GaAs/
V-X
HPLEC法(高圧封止材チョクラルスキー法)によるInP結晶成長解析
STR Group
http://www.semitech.us/products/CGSim/
HPLEC_of_InP/
V-X
連続原料供給法によるCSI結晶成長解析
STR Group
http://www.semitech.us/products/CGSim/
Continuous_feed_CsI/
Ge,CsI
水熱合成法による石英結晶成長解析
STR Group
http://www.semitech.us/products/CGSim/
quartz/
半透明酸化物結晶の結晶成長解析
STR Group
http://www.semitech.us/products/CGSim/
Oxide_Crystals/
Oxide
VGF法によるGaAs結晶成長におけるヒーターパワーの調節
STR Group
http://www.semitech.us/products/CGSim/
VGF_growth_of_GaAs/
V-X
HEM法(熱交換法)によるサファイア(Al2O3)結晶成長解析 STR Group
http://www.semitech.us/products/CGSim/
HEM/
Oxide
COMPUTER MODELING OF CZ AND DS SILICON INGOT CRYSTALLIZATION PROCESSES
Yoshiki Tsukada ( STR Japan )
7th International Workshop on Crystalline Silicon Solar Cell (CSSC7)
Silicon
450ミリシリコン結晶成長 へのシミュレーションの適用
塚田 佳紀 ( STR Japan 株式会社)
日本機械学会 第26回計算力学講演会(CMD2013)
Silicon
結晶成長プロセスにおける数値シミュレーションの役割-バルク結晶成長から薄膜結晶成長まで-
向山 裕次(STR Japan株式会社)
第44回結晶成長国内会議 NCCG-44(東京)
チョクラルスキー法によるシリコン単結晶成長への数値シミュレーションの適用-三次元横磁場解析や引き上げのダイナミクス解析による点欠陥制御-
飯塚 将也(STR Japan 株式会社)
応用物理学会 シリコンテクノロジー分科会 第179回 研究集会
Silicon
Na-Flux 法における窒化ガリウム単結晶成長のための数値解析 飯塚 将也(STR Japan 株式会社) 第7回 窒化物半導体結晶成長講演会(プレISGN-6) GaN
Advanced chemical model for analysis of Cz and DS Si-crystal growth A.N. Vorob’ev, et al Journal of Crystal Growth 386 (2014) 226–234 Silicon
Optimization of heating conditions during Cz BGO crystal growth A.V. Kolesnikov, et al Journal of Crystal Growth 407 (2014) 42-47 BGO
Crystal twisting in Cz Si growth V. Kalaev, et al Journal of Crystal Growth 413 (2015) 12-16 Silicon
3D melt convection in sapphire crystal growth: Evaluation of physical properties V.V. Timofeev, et al International Journal of Heat and Mass Transfer 87 (2015) 42-48 Sapphire
Optimization of bottom heater parameters at growth of
large BGO crystals by conventional Czochralski method
Evgeniy Galenin, et al
17th International Conference on Crystal Growth and Epitaxy
BGO
Evolution of Sapphire Melt Convection at the Transition
to Large Scale Ky Technology
Svetlana Demina, et al
17th International Conference on Crystal Growth and Epitaxy
Sapphire
Numerical study of dislocation formation during transient
growth of multi-Si by the direct solidification technique
Vasif Mamedov, et al
17th International Conference on Crystal Growth and Epitaxy
Silicon
Computational analysis of precipitates, parasitic deposits
and gas-to-particle conversion during Cz and DS Si-crystal
growth
Andrei Vorob'ev, et al
17th International Conference on Crystal Growth and Epitaxy
Silicon
Modeling of Dislocation Dynamics and Facet Formation
in VGF of GaAs
Vasif Mamedov, et al
17th International Conference on Crystal Growth and Epitaxy
GaAs
Material development for directional solidification of
multicrystalline silicon by AHP method
Michael A. Gonik, et al
17th International Conference on Crystal Growth and Epitaxy
Silicon
Simulation of facet formation during Czochralski growth
of YAG and GGG
Vasif Mamedov, et al
17th International Conference on Crystal Growth and Epitaxy
YAG, GGG
Optimization of bottom heater parameters at growth of
large BGO crystals by conventional Czochralski method
Evgeniy Galenin, et al 17th International Conference on Crystal Growth and Epitaxy BGO
Evolution of Sapphire Melt Convection at the Transition
to Large Scale Ky Technology
Svetlana Demina, et al 17th International Conference on Crystal Growth and Epitaxy Sapphire
Numerical study of dislocation formation during transient
growth of multi-Si by the direct solidification technique
Vasif Mamedov, et al 17th International Conference on Crystal Growth and Epitaxy Silicon
Computational analysis of precipitates, parasitic deposits
and gas-to-particle conversion during Cz and DS Si-crystal
growth
Andrei Vorob'ev, et al 17th International Conference on Crystal Growth and Epitaxy Silicon
Modeling of Dislocation Dynamics and Facet Formation
in VGF of GaAs
Vasif Mamedov, et al 17th International Conference on Crystal Growth and Epitaxy GaAs
Material development for directional solidification of
multicrystalline silicon by AHP method
Michael A. Gonik, et al 17th International Conference on Crystal Growth and Epitaxy Silicon
Simulation of facet formation during Czochralski growth
of YAG and GGG
Vasif Mamedov, et al 17th International Conference on Crystal Growth and Epitaxy YAG, GGG
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