発表事例(気相からの結晶成長解析)|結晶成長やデバイスのシミュレーション【STRJapan株式会社】

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気相からの結晶成長解析
MOCVD 法による窒化物結晶成長
題名 発表者 発表先
Novel approach to simulation of group-III nitrides growth by MOVPE.
S.Yu. Karpov, et al
MRS Internet J. Nitride Semicond. Res., 4, 4 (1999)
Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor.
R. A. Talalaev, et al
MRS Internet J. Nitride Semicond. Res., 4, 5 (1999)
On the possible origins of low indium incorporation during MOVPE of InGaN.
R.A. Talalaev, et al
Phys. Stat. Sol. (a), 176 (1999) 253-256
Surface Segregation and Composition Fluctuations in ammonia MBE and MOVPE of InGaN.
S.Yu. Karpov, et al
Mat. Res. Soc. Symp. Proc., 639 (2001) G3.18.
Critical issues in group-III nitride MOVPE modeling.
E.V. Yakovlev, et al
Electrochemical Society Proceedings, Vol. 2003-08 (2003) 258
MOVPE growth and in situ characterization of GaN layers on sapphire substrates.
H. Hardtdegen, et al
Phys. Stat. Sol. (a), 201 (2) (2004) 312-319
New MOVPE process for horizontal reactors with reduced parasitic deposition.
H. Hardtdegen, et al
Journal of Crystal Growth, 272 (2004) 407-414
Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study
A.V. Kondratyev, et al
Journal of Crystal Growth, 272 (2004) 420-425
Parametric studies of III-nitride MOVPE in commercial vertical high-speed rotating disk reactors.
A. Lobanova, et al
Journal of Crystal Growth, 266 (2004) 354-362
Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating disk reactors.
K. Mazaev, et al
Journal of Crystal Growth, 261 (2004) 190-196
Deposition behavior of GaN in AIX 200/4 RF-S horizontal reactor.
E.V. Yakovlev, et al
Journal of Crystal Growth, 261 (2004) 182-189.
IN-SITU INVESTIGATIONS OF GAN CHEMICAL UNSTABILITY
DURING MOCVD
R.A. Talalaev, et al
Electrochemical Society Proceedings, 2005-09, 299-305 (2005)
Effect of V/III ratio in AlN and AlGaN MOVPE
A.V. Lobanova, et al
Journal of Crystal Growth, 287 (2006) 601-604
Effects of reactor pressure and residence time on GaN MOVPE growth efficiency.
W.V. Lundin, et al
Journal of Crystal Growth, 287 (2006) 605-609
Modeling and experimental analysis of InGaN MOVPE in the Aixtron AIX 200/4 RF-S horizontal reactor.
E.V. Yakovlev, et al
Phys. Stat. Sol. (c), 3 (6) (2006) 1620-1623
Modeling and process design of III-Nitride MOVPE at near-atmospheric pressure in Close Coupled Showerhead and Planetary Reactors.
M. Dauelsberg, et al
Journal of Crystal Growth, 298 (2007) 418-424
Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor.
C. Martin, et al
Journal of Crystal Growth, 303 (2007) 318-322
Influence of the Reactor Inlet Configuration on the AlGaN Growth Efficiency.
E.V. Yakovlev, et al
Journal of Crystal Growth, 298 (2007) 413-417.
Effect of metallic surface coverage on material quality in III-nitride MOVPE.
A.V. Kondratyev, et al
Phys. Stat. Sol. (c), 5 (6) (2008) 1691-1694
Growth conditions and surface morphology of AlN MOVPE.
A.V. Lobanova, et al
Journal of Crystal Growth, 310 (2008) 4935-4938.
Hydrogen effects in III-nitride MOVPE.
E.V. Yakovlev, et al
Journal of Crystal Growth, 310 (2008) 4862-4866
Mechanisms of AlInN growth by MOVPE: modeling and experimental study.
E.V. Yakovlev, et al
Phys. Stat. Sol. (c), 5 (6) (2008) 1688-1690
Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs.
A.V. Sakharov, et al
Semiconductors, 43 6 (2009) 812-817
Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity.
M. V. Durnev, et al
Applied Physics Letters 97 (2010) 051904
Investigation of Nitride MOVPE at high pressure and high growth rates in large production reactors by a combined modelling and experimental approach.
M. Dauelsberg, et al
Journal of Crystal Growth, 315 (2011) 224-228.
Strain effects on indium incorporation and optical transitions in green-light InGaN heterostructures of different orientations.
M. V. Durnev, et al
Phys. Stat. Sol. (a), 208 (11) (2011) 2671-2675
Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice.
W.V.Lundin, et al
Journal of Crystal Growth, 315 (2011) 267-271.
High Aluminium Content and High Growth Rates of AlGaN in a Close-Coupled Showerhead MOVPE Reactor.
J. Stellmach, et al
Journal of Crystal Growth, 315 (2011) 229-232
InGaN/GaN short-period superlattices: synthesis, properties, applications.
A.F. Tsatsulnikov, et al
Phys. Stat. Sol. (c), 8 (7-8) (2011) 2308-2310.
AlInN MOVPE: growth chemistry and analysis of trends.
A.V. Lobanova, et al
Journal of Crystal Growth, 352 (2012) 199-202
High growth rate MOVPE of Al(Ga)N in planetary reactor
W.V. Lundin, et al
Journal of Crystal Growth 352 (2012) 209-213
Correlations Between Epitaxy Recipe, Characteristics, and Performance of Nitride Light Emitting Diode Structures.
E.V. Yakovlev, et al
Jpn. J. Appl. Phys. 52 (2013) 08JB15.
MOVPE法(有機金属気相成長法)におけるAlNの表面モルフォロジーと成長条件
STR Group
http://www.str-soft.com/products/cvdsim/
Nitride_Edtion/Case_1/
MOVPE法によるIII族窒化物の成長における、表面金属被覆の結晶品質に対する影響
STR Group
http://www.str-soft.com/products/cvdsim/
Nitride_Edtion/Case_2/
AlGaNの成長効率に対するリアクター流入口形状の影響
STR Group
http://www.str-soft.com/products/cvdsim/
Nitride_Edtion/Case_3/
MOCVD法におけるV族窒化物成膜プロセスのための数値解析
飯塚 将也(STR Japan株式会社)
ナノ構造・エピタキシャル成長分科会 2014春季講演会
Mechanism of stress relaxation in (0001) InGaN/GaN via formation of V-shaped dislocation half-loops. A.V. Lobanova, et al Appl. Phys. Lett., 103 (2013) 152106.
On Mechanisms Governing AlN and AlGaN Growth Rate and Composition in Large Substrate Size Planetary MOVPE Reactors. M. Dauelsberg, et al Journal of Crystal Growth, 393 (2014) 103-107.
Transport Phenomena in Vapor Phase Epitaxy Reactors. R. Talalaev, et al, In: Nishinaga T, Kuech TF, editors. Handbook of Crystal Growth, Vol. III. Elsevier; 2015. pp.909–42.
On Mechanisms Governing AlN and AlGaN Growth Rate and Composition in Large Substrate Size Planetary MOVPE Reactors
Dauelsberg, Martin, et al
THE 19TH AMERICAN CONFERENCE ON CRYSTAL GROWTH AND EPITAXY
in conjunction with
THE 16TH US BIENNIAL WORKSHOP ON ORGANOMETALLIC VAPOR PHASE EPITAXY
Fast MOVPE of III-nitride materials at super-atmospheric pressure in horizontal flow reactor W.V. Lundin, et al
EWMOVPE 2013
15th European Workshop on Metalorganic Vapor Phase Epitaxy
AlN Growth Modelling in a Planetary Reactor on Large Substrates
Daniel Brien, et al
EWMOVPE 2013
15th European Workshop on Metalorganic Vapor Phase Epitaxy
New Mechanism of Stress Relaxation in (0001) InGaN-Based
Heterostructures
A. V. Lobanova, et al
10th International Conference on Nitride Semiconductors
Fast MOVPE of III-N device heterostructures
W.V. Lundin, et al
17th International Conference on Metalorganic Vapor Phase Epitaxy
Optimization of MOVPE of nitride device structures for a wide range process conditions
W.V. Lundin, et al
5th International Symposium on Growth of III-Nitrides
Atomic-scale composition profiles of MOCVD-grown InGaN/GaN quantum wells: Modeling and characterization
A. Segal, et al
International Workshop on Nitride Semiconductors
Wrozław
MOCVD 法での III 族窒化物エピタキシャル成長解析
塚田 佳紀
日本機械学会 第28回計算力学講演会(CMD2015)
On Mechanisms Governing AlN and AlGaN Growth Rate and Composition in Large Substrate Size Planetary MOVPE Reactors Dauelsberg, Martin, et al THE 19TH AMERICAN CONFERENCE ON CRYSTAL GROWTH AND EPITAXY
in conjunction with
THE 16TH US BIENNIAL WORKSHOP ON ORGANOMETALLIC VAPOR PHASE EPITAXY
Fast MOVPE of III-nitride materials at super-atmospheric pressure in horizontal flow reactor W.V. Lundin, et al EWMOVPE 2013
15th European Workshop on Metalorganic Vapor Phase Epitaxy
AlN Growth Modelling in a Planetary Reactor on Large Substrates Daniel Brien, et al EWMOVPE 2013
15th European Workshop on Metalorganic Vapor Phase Epitaxy
New Mechanism of Stress Relaxation in (0001) InGaN-Based
Heterostructures
A. V. Lobanova, et al 10th International Conference on Nitride Semiconductors
Fast MOVPE of III-N device heterostructures W.V. Lundin, et al 17th International Conference on Metalorganic Vapor Phase Epitaxy
Optimization of MOVPE of nitride device structures for a wide range process conditions W.V. Lundin, et al 5th International Symposium on Growth of III-Nitrides
Atomic-scale composition profiles of MOCVD-grown InGaN/GaN quantum wells: Modeling and characterization A. Segal, et al International Workshop on Nitride Semiconductors
Wrozław
MOCVD 法での III 族窒化物エピタキシャル成長解析 塚田 佳紀 日本機械学会 第28回計算力学講演会(CMD2015)
HVPE 法による窒化物エピタキシャル成長
題名 発表者 発表先
Transport and Chemical Mechanisms in GaN Hydride Vapor Phase Epitaxy
S.Yu. Karpov, et al
Mat. Res. Soc. Symp. Proc. Vol. 743 (2003) Materials Research Society L3.40.1-6
Indium-free violet LEDs grown by HVPE
A.S. Usikov, et al
phys. stat. solidi (c) 0, No. 7, 2265–2269 (2003)
Surface chemistry and transport effects in GaN hydride vapor phase epitaxy.
A.S. Segal, et al
Journal of Crystal Growth, 270 (2004) 384-395
Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE.
E. Richter, et al
Journal of Crystal Growth, 277 (2005) 6-12
Modeling Analysis of AlN and AlGaN HVPE
A.S. Segal, et al
Phys. Stat. Sol. (c), 6 (S2) (2009) S329-S332
HVPE法(ハイドライド気相エピタキシャル成長法)によるAlGaN薄膜成長解析
STR Group
http://www.str-soft.com/products/cvdsim/
HVPE/algan_hvpe/
Transport and Chemical Mechanisms in GaN Hydride Vapor Phase Epitaxy
S.Y. Karpov, et al
Mat. Res. Soc. Symp. Proc. Vol. 743 © 2003 Materials Research Society
Surface chemistry and transport effects in GaN hydride vapor phase epitaxy
A.S. Segal, et al
Journal of Crystal Growth 270 (2004) 384–395
Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE
E. Richter, et al
Journal of Crystal Growth 277 (2005) 6–12
Modeling analysis of AlN and AlGaN HVPE
A.S. Segal, et al
Phys. Status Solidi C 6, No. S2, S329–S332 (2009)
HVPE法(ハイドライド気相エピタキシャル成長法)によるGaN, AlN, AlGaN結晶成長解析
STR Group
http://www.semitech.us/products/
Virtual_Reactor/hepigans/
昇華法による AlN 結晶成長解析
題名 発表者 発表先
Sublimation Growth of AlN in Vacuum and in a Gas Atmosphere
S.Y. Karpov, et al
phys. stat. sol. (a) 176, 435 (1999)
On mechanisms of sublimation growth of AlN bulk crystals
A.S. Segal, et al
Journal of Crystal Growth 211 (2000) 68-72
AlN crystal growth by sublimation technique
S.Y. Karpov, et al
Materials Science Forum Vols. 353-356 (2001)
pp. 779-782
Effect of reactive ambient on AlN sublimation growth
S.Y. Karpov, et al
Physica Status Solidi (a) 188, p.763–767 (2001)
Experimental and Theoretical Analysis of Heat and Mass Transport in the System for AlN Bulk Crystal Growth
M.V. Bogdanov, et al
Mat. Res. Soc. Symp. Proc. Vol. 743 © 2003
Materials Research Society
Role of oxygen in AlN sublimation growth
S.Y. Karpov, et al
phys. stat. sol. (c), 1– 4 (2003)
Experimental and Theoretical Analysis of Sublimation Growth of Bulk AlN Crystals
Eugenie Mokhov, et al
ICSCRM 2003, Lyon, France, Part 2, P. 1545-1548 /Materials Science Forum 457-460 (2004)
Sublimation Growth of AlN bulk crystals in Ta crucibles
E.N. Mokhov, et al
Journal of Crystal Growth, V. 281, Issue 1, 2005, P. 93-100
Experimental and theoretical analysis of sublimation growth of AlN bulk crystals
Y.N. Makarov, et al
"Journal of Crystal Growth, V. 310, Issue 5, 2008,
P. 881-886"
Growth of AlN bulk crystals by sublimation sandwich method
E.N.Mokhov, et al
Original
Detailed Modeling Analysis of PVT Growth of AlN Bulk Crystals
M.S. Ramm, et al
Original
PVT法(昇華法)による窒化アルミニウム(AlN)結晶成長解析
STR Group
http://www.str-soft.com/consulting/
pvt_growth/aluminum_nitride/
昇華法による SiC 結晶成長解析
題名 発表者 発表先
Transport phenomena in sublimation growth of SiC bulk crystals
A.S. Segal, et al
Materials Science and Engineering B61–62 (1999) 40–43
Optimization of sublimation growth of SiC bulk crystals using
M.S. Ramm, et al
Materials Science and Engineering B61–62
(1999) 107–112
Analysis of sublimation growth of bulk SiC crystals in tantalum container
S.Y. Karpov, et al
Journal of Crystal Growth 211 (2000) 347-351
Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT
M. Selder, et al
Journal of Crystal Growth 211 (2000) 333-338
Evolution of thermoelastic strain and dislocation density during sublimation growth of silicon carbide
I.A.Ahmakin, et al
Diamond and Related Materials 9 (2000) 446–451
Virtual reactor as a new tool for modeling and optimization of SiC bulk crystal growth
M. V. Bogdanov, et al
Journal of Crystal Growth 225, p.307-311(2001)
Virtual reactor: a new tool for SiC bulk crystal growth study and optimization
M.V. Bogdanov, et al
Materials Science Forum 353-356, p.57-60, (2001)
Inverse-computation design of a SiC bulk crystal trowth system
A.V. Kulik, et al
Mat. Res. Soc. Symp. Proc.640 (2001) H1.6
Advances in Modeling of Wide-Bandgap Bulk Crystal Growth
M.V. Bogdanov, et al
ICSSC2002
Modeling analysis of free-spreading sublimation growth of SiC crystals
M. V. Bogdanov, et al
Mat. Res. Soc. Symp. Proc. Vol. 742 © 2003
Materials Research Society
Analysis of threading dislocations in wide-bandgap hexagonal semiconductors by energetic approach
A.K. Semennikov, et al
Materials Science Forum 457-460 p.383-386, (2004)
Theoretical Analysis of the Mass Transport in the Powder Charge in Long-Term Bulk SiC Growth
A.V. Kulik, et al
Mat. Sci. Forum 457-460 (2004) 67-70
Modeling of facet formation in SiC bulk crystal growth
I.D. Matukov, et al
Journal of Crystal Growth 266 (2004) 313–319
Industrial Challenges for Numerical Simulation of Crystal Growth
M.V.Bogdanov, et al
Centr. Eur. Jour. Phys.2(1), p.183-203, (2004)
Analysis of Graphitization during Physical vapor Transport Growth of Silicon Carbide
P.J. Wellmann, et al
Mat. Sci. Forum 457-460 (2004) 55-58
Faceted Growth of SiC Bulk Crystals
I.D. Matukov, et al
Materials Science Forum Vols. 457-460 (2004)
pp. 63-66
In situ visualization of SiC physical vapor transport crystal growth
Peter Wellmann, et al
Journal of Crystal Growth 275 (2005) e1807–e1812
Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace
Eugene Tupitsyn, et al
Materials Science Forum Vols. 600-603 (2009)
pp 27-30
Growth of Faceted Free-Spreading SiC Bulk Crystals by Sublimation
E.N.Mokhov, et al
Materials Science Forum
Modeling of Mass Leakage through Porous Crucible in PVT Growth of Bulk SiC
Crystals
M.V. Bogdanov, et al
Original paper
Effect of Seed Attachment on Stress Evolution in SiC Bulk Crystal Growth by PVT
M.S.Ramm, et al
Original paper
Dynamics of 4H-SiC Plasticity
S.Y. Karpov, et al
Original paper
PVT法(昇華法)によるシリコンカーバイト(SiC)結晶成長解析
STR Group
http://www.str-soft.com/consulting/
pvt_growth/silicon_carbide/
Numerical analysis of threading and basal plane dislocations in bulk SiC crystals grown by PVT
Mark RAMM, et al
10th European Conference on Silicon Carbide and Related Materials - ECSCRM 2014 -
CVD 法による SiC 結晶成長
題名 発表者 発表先
Modeling analysis of SiC CVD in a planetary reactor.
A.N. Vorob’ev, et al
Mat. Science Forum, 353-356 (2001) 103-106.
Numerical study of SiC CVD in a vertical cold-wall reactor.
A.N. Vorob’ev, et al
Computational Materials Science, 24 (2002) 520–534.
Modeling analysis of SiC CVD in the horizontal hot wall reactors.
A.K. Semennikov, et al
Electrochemical Society Proceedings, Vol. 2003-08 (2003) 210.
Analysis of SiC CVD Growth in a Horizontal Hot-wall Reactor by Experiment and 3D Modelling.
Y. Shishkin, et al
Mat. Science Forum, 556-557 (2007) 61-64
Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane.
Yuri N. Makarov, et al
Mat. Science Forum, 600-603 (2009) 51-53
Modeling of Vapor-Phase Growth of SiC and AlN Bulk Crystals.
R.A. Talalaev, et al
Published in: Crystal Growth Technology: Semiconductors and Dielectrics. Edited by P. Capper and P. Rudolph (2010).
熱CVD法における窒素ドープSiC成膜のための数値解析
飯塚 将也(STR Japan株式会社)
先進パワー半導体分科会 第1回講演会 (名古屋)
Modeling of silicon carbide chemical vapor deposition in a vertical reactor
A.N. Vorob’ev, et al
Materials Science and Engineering B61–62 (1999) 172–175
Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition
A.N. Vorob’ev, et al
"Materials Science and Engineering B61–62 (1999)
176–178"
Modeling of gas phase nucleation during silicon carbide chemical vapor deposition
A.N. Vorob’ev, et al
Diamond and Related Materials 9 (2000) 472–475
Effect of gas-phase nucleation on chemical vapor deposition of silicon carbide
A.N. Vorob’ev, et al
Journal of Crystal Growth 211 (2000) 343-346
COMPUTATIONAL EXPERIMENT ON CVD OF SiC: GROWTH RATE, C/Si RATIO, PARASITIC PHASE FORMATION
A.N. Vorob’ev, et al
Materials Research Society Symposium Proceedings 616, 165 (2000)
Influence of Silicon Gas-to-Particle Conversion on SiC CVD in a Cold-Wall Rotating Disc Reactor
A.N. Vorob’ev, et al
Materials Science Forum Vols. 353-356 (2001)
pp 107-110
Modeling Analysis of SiC CVD in Planetary Reactor
A.N. Vorob’ev, et al
Materials Science Forum Vols. 353-356 (2001)
pp 103-106
Numerical study of SiC CVD in a vertical cold-wall reactor
A.N. Vorob’ev, et al
Computational Materials Science 24 (2002)
520–534
Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane
Y.N.Makarov, et al
Materials Science Forum Vols. 600-603 (2009)
p. 51-53
EFFECT OF GAS PHASE NUCLEATION ON SILICON CARBIDE CHEMICAL VAPOR DEPOSITION
A.N.Vorob’ev, et al
Original paper
MODELING ANALYSIS OF SIC CVD IN THE HORIZONTAL HOT WALL1 REACTORS
A.K. Semennikov, et al
Original paper
Study of Al Incorporation in Chemical Vapor Deposition
of p-Doped SiC
A.S. Segal, et al Materials Science Forum Vols 821-823 (2015) pp 145-148
MOCVD 法による III-V 結晶成長
題名 発表者 発表先
Quasi-thermodynamic models of surface chemistry: application to MOVPE of III-V ternary compounds.
S.Yu. Karpov, et al
Electrochemical Society Proceedings, Vol. 2000-13, edited by M.D. Allendorf and M.L. Hitchman, (2000) 723-730
Comprehensive reactor-scale modeling of III-V ternary compound growth by MOVPE.
E.V. Yakovlev, et al
Mat. Res. Soc. Symp. Proc., 616 (2000) 153-158.
On low temperature kinetic effects in Metal - Organic Vapor Phase Epitaxy of III-V compounds.
R.A. Talalaev, et al
Journal of Crystal Growth 230 (2001) 22-29
Detailed Modeling of Metal Organic Vapor Phase Epitaxy of III-V Ternary compounds in Production-Scale AIX 2400G3 Planetary Reactor
E.V. Yakovlev, et al
Electrochemical Society Proceedings, Vol. 2001-13, (2001) 292-300
Development of a computational model for process parametric studies in a MOVPE multiwafer reactor, using the STR CVD-Module software
R.A. Talalaev, et al
EVMOVPEX, 8-11 (2003)
MOVPE法によるIII-V族薄膜成長解析
STR Group
http://www.str-soft.com/consulting/
cvd_of_iii_vs/mocvd/
CVD 法による Si, SiGe 結晶成長
題名 発表者 発表先
GLOBAL MODEL OF SILICON CHEMICAL VAPOR DEPOSITION IN CENTURA REACTORS
A.S. Segal, et al
Electrochem. Soc. Proc. 2000-13 (2000) 456
Comparison of silicon epitaxial growth on the 200- and 300-mm wafers from trichlorosilane in Centura reactors
A.S. Segal, et al
Microelectronic Engineering 56 (2001) 93–98
Kinetics of SiGe chemical vapor deposition from chloride precursors
A.A. Lovtsus, et al
Journal of Crystal Growth 287 (2006) 446–449
Convection-assisted Chemical Vapor Deposition (CoCVD) of silicon on Large-Area substrates
T. Kunz, et al
Journal of Crystal Growth 310 (2008) p. 1112-1117
Antimony surfactant for epitaxial growth of SiGe buffer layers at high deposition temperatures, P. Storck, et al Thin Solid Films 518 (2010) S23–S29
シーメンス法による多結晶シリコン結晶成長
題名 発表者 発表先
シーメンス法による多結晶シリコン結晶成長解析
STR Group
http://www.semitech.us/products/
PolySim/
全般
題名 発表者 発表先
Critical issues of MOCVD process design: from reactor efficiency to material properties
Roman Talalaev
2015 Lawrence Workshop on Epitaxy
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