発表事例(デバイス解析)|結晶成長やデバイスのシミュレーション【STRJapan株式会社】

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デバイス解析
光学デバイス ( LED, Laser )
題名 発表者 発表先
Dislocation Effect on Light Emission Efficiency in Gallium Nitride
S. Yu. Karpov, et al
Appl. Phys. Lett. 81 (2002) 4721-4723
Segregation effects and bandgap engineering in InGaN quantum-well heterostructures
K. A. Bulashevich, et al
Mat. Res. Soc. Symp. Proc. 743, (2003) L.6.5.1-6
Indium-free violet LEDs grown by HVPE
A. S. Usikov, et al
Phys. Stat. Solidi (c) 0 (2003) 2265-2269
HVPE-grown AlN-GaN based structures for UV spectral region
A. S. Usikov, et al
In: UV Solid-State Light Emitters and Detectors, Eds. M.S. Shur and A. Zukauskas, Kluver Academic Publishers, Netherlands (2004) 15-29
Carrier injection and light emission in visible and UV nitride LEDs by modeling
S. Yu. Karpov, et al
Phys. Stat. Solidi (b) 241 (2004) 2668-2671
Bandgap engineering of electronic and optoelectronic devices on native AlN and GaN substrates: A modelling insight
V. F. Mymrin, et al
J. Cryst. Growth 281 (2005) 115-124
Heterojunctions between group-III nitride short-period superlattices
K. A. Bulashevich, et al
Phys. Stat. Solidi (c) 2 (2005) 2394-2398
Modelling of MQW LED operation
V. F. Mymrin, et al
Phys. Stat. Solidi (c) 2 (2005) 2928-2931
Simulation of Hybrid ZnO/AlGaN Single-Heterostructure Light-Emitting Diode
K. A. Bulashevich, et al
Appl. Phys. Lett. 87 (2005) 243502
Simulation of Visible and Ultra-Violet Group-III Nitride Light Emitting Diodes
K. A. Bulashevich, et al
J. Comput. Phys. 213 (2006) 214-238
Current crowding effects on blue LED operation
I. Yu. Evstratov, et al
Phys. Stat. Solidi (c) 3 (2006) 1645-1648
Analytical model for the quantum-confined Stark effect including electric field screening by non-equilibrium carriers
K. A. Bulashevich, et al
Phys. Stat. Solidi (b) 243 (2006) 1625-1629
ZnO-Based Light Emitters
A. Osinsky, et al
In: Zinc Oxide. Bulk, Thin Films and Nanostructures, Eds. C. Jagadish and S.J.Pearton, Elsevier, Ch.15 (2006) 525-554
Hybrid ZnO/III-nitride light-emitting diodes: modelling analysis of operation
K. A. Bulashevich, et al
Phys. Stat. Solidi (a) 204 (2007) 241-245
Current spreading and thermal effects in blue LED dice
K. A. Bulashevich, et al
Phys. Stat. Solidi (c) 4 (2007) 45-48
Effect of Free-Carrier Absorption on Performance of 808 nm AlGaAs-Based High-Power Laser Diodes
K. A. Bulashevich, et al
Semicond. Sci. Technol. 22 (2007) 502-510
Visible Light-Emitting Diodes
S. Yu. Karpov, et al
In: Nitride Semiconductor Devices: Principles and Simulation, Ed. J. Piprek, WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, Ch.14 (2007) 303-325
Is Auger recombination responsible for the efficiency rollover in III-nitride light-emitting diodes?
K. A. Bulashevich, et al
Phys. Stat. Solidi (c) 5 (2008) 2066-2069
Current spreading, heat transfer, and light extraction in multi-pixel LED array
M. V. Bogdanov, et al
hys. Stat. Solidi (c) 5 (2008) 2070-2072
Coupled modeling of current spreading, thermal effects, and light extraction in III-Nitride light-emitting diodes
M. V. Bogdanov, et al
Semicond. Sci. Technol. 23 (2008) 125023
Hybrid CdZnO/GaN quantum-well light emitting diodes
J. W. Mares, et al
J. Appl. Phys. 104 (2008) 093107
Bandgap Engineering of III-Nitride Devices от Low-Defect Substrates
S. Yu. Karpov
In: III-Nitride Devices and Nanoengineering, Ed. Zhe Chuan Feng, Imperial College Press, London, Ch.13 (2008) 367-398
Effects of electron and optical confinement on performance of UV laser diodes
K. A. Bulashevich, et al
Phys. Stat. Solidi (c) 6 (2009) 603-606
Assessment of various LED structure designs for high-current operation
K. A. Bulashevich, et al
Phys. Stat. Solidi (c) 6 (2009) S804-S806
Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth
A. Y. Polyakov, et al
J. Appl. Phys. 105 (2009) 123708
Mechanism of carrier injection in (Ni/Au)/p-AlxGa1−xN:Mg (0 ≤ x ≤ 0.1) Ohmic contacts
S. Nikishin, et al
Appl. Phys. Lett. 95 (2009) 163502
Comparison of Alternative Approaches to High-Power Thin-Film LED Chip Design
K. A. Bulashevich, et al
Proceedings of the Second International Conference on White LEDs and Solid State Lighting, Taipei (2009) TB1-5
Spontaneous polarization in III-nitride materials: crystallo-graphic revision
S. Yu. Karpov
Phys. Stat. Solidi (c) 7 (2010) 1841-1843
Effect of ITO spreading layer on performance of blue light-emitting diodes
M. V. Bogdanov
Phys. Stat. Solidi (c) 7 (2010) 2127-2129
Current crowding effect on light extraction efficiency of thin-film LEDs
M. V. Bogdanov, et al
Phys. Stat. Solidi (c) 7 (2010) 2124-2126
Short period p-type AlN/AlGaN superlattices for deep UV light emitters
S. Nikishin, et al
MRS Symp. Proc. 1202 (2010) 1202-I10-03
Laterally overgrown GaN/InGaN multi-quantum well heterostructures: Electrical and optical properties
A. Polyakov, et al
Phys. Status Solidi (a), 207 (2010) 1383-1385
Effect of Temperature and Current Variation on the Colour Quality of White Light Emitting Diodes
O. V. Khokhlev
In: Proc. 12th Int. Symposium on the Science and Technology of Light Sources & 3rd Int. Conf. on White LEDs and Solid State Lighting, Eds. M. Haverlag, G. M. W. Kroesen and T. Taguchi, FAST-LS Ltd. (2010) 29-30
Indium Incorporation and Optical Transitions in InGaN Bulk Materials and Quantum Wells with Arbitrary Polarity
M. V. Durnev, et al
Appl. Phys. Lett. 97 (2010) 051904
Effect of localized states on internal quantum efficiency of III-nitride LEDs
S. Yu. Karpov, et al
Phys. Status Soildi RRL, 4 (2010) 320-322
Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency
A. Y. Polyakov, et al
Appl. Phys. Lett. 98 (2011) 072104
Modeling of III-Nitride Light-Emitting Diodes: Progress, Problems, and Perspectives
S. Yu. Karpov, et al
Proc. of SPIE 7939 (2011) 79391C
Strain effects on indium incorporation and optical transitions in green-light InGaN heterostructures of different orientations
M. V. Durnev, et al
Phys. Stat. Solidi (a) 208 (2011) 2671-2675
Efficiency droop suppression in InGaN-based blue LEDs: Experiment and numerical modelling
D. A. Zakheim, et al
Phys. Stat. Solidi (a) 209 (2012) 456-460
Simulation of light-emitting diodes for new physics understanding and device design
K. A. Bulashevich, et al
In: Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI, Eds. K. P. Streubel, H. Jeon, L.-W. Tu, and N. Linder, Proc. of SPIE 8278 (2012) 827819
Metastable centers in AlGaN/AlN/GaN heterostructures
A. Y. Polyakov, et al
J. Vac. Sci. Technol. B 30 (2012) 041209
Polarization phenomena in light emission from C-plane Al(In)GaN heterostructures
M. V. Durnev, et al
Phys. Stat. Solidi (b) 250 (2013) 180-186
Experimental and theoretical study of electrical, thermal, and optical characteristics of InGaN/GaN high-power flip-chip LEDs
A. E. Chernyakov, et al
Phys. Stat. Solidi (a) 210 (2013) 466-469
Polarization doping for III-nitride optoelectronics
O. V. Khokhlev, et al
accepted to Phys. Stat. Solidi (a) (2013)
Correlations Between Epitaxy Recipe, Characteristics, and Performance of Nitride Light Emitting Diode Structures
E. V. Yakovlev, et al
Jpn. J. Appl. Phys. 52 (2013) 08JB15
青色LED 単一量子井戸(SQW)ヘテロ構造のバンド計算
STR Group
http://www.semitech.us/products/
SiLENSe/example_1/
青色LED 多重量子井戸(MQW)ヘテロ構造のバンド計算
STR Group
http://www.semitech.us/products/
SiLENSe/example_2/
サファイア基板上のUV レーザダイオード特性解析
STR Group
http://www.semitech.us/products/
SiLENSe/example_3/
II族-O/III族-N ハイブリッドLEDヘテロ構造のバンド計算
STR Group
http://www.semitech.us/products/
SiLENSe/example_5/
極性/半極性/無極性ヘテロ構造の特性解析
STR Group
http://www.semitech.us/products/
SiLENSe/example_6/
LEDチップの熱的、電気的解析
STR Group
http://www.str-soft.com/products/
SpeCLED/
LEDチップの光学的解析(光取り出し)
STR Group
http://www.str-soft.com/products/
RATRO/
Spectral dependence of light extraction efficiency of high-power III-nitride light-emitting diodes S. Yu. Karpov, et al Phys. Status Solidi RRL (2015) / DOI 10.1002/pssr.201510073
Theoretical and Experimental Study of Thermal Management in High-Power AlInGaN LEDs A. E. Chernyakov, et al Proc. 15th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (2014) 1-5 / DOI: 10.1109/EuroSimE.2014.6813819
Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes I. E. Titkov, et al IEEE J. Quantum Electron. 50 (2014) 911-920.
ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs a review S. Yu. Karpov, et al Opt. Quantum Electron. (2014) / DOI: 10.1007/s11082-014-0042-9
Strategies for creating efficient, beautiful whites S. Yu. Karpov, et al Compound Semiconductors, 21 (2015) 44-47.
Optimal ways of colour mixing for high-quality white-light LED sources K. A. Bulashevich, et al Phys. Stat. Solidi (a), 212 (2015) 914-919.
Optimal Ways of Color Mixing for High-Quality White-Light LED
Sources
K. A. Bulashevich, et al
International Workshop on Nitride Semiconductors
Wrozław
電子デバイス
題名 発表者 発表先
Field-effect transistors based on AlGaN/GaN/AlGaN double-heterostructures grown by MBE
S. B. Aleksandrov, et al
Phys. Stat. Solidi (c) 2 (2005) 2688-2691
A surface trap model and its application to analysis of III-nitride HEMT performance
K. A. Bulashevich, et al
Phys. Stat. Solidi (c) 3 (2006) 2356-2359
Assessment of the pendeo-epitaxy effect on 2DEG mobility in III-nitride HEMT heterostructures
K. A. Bulashevich, et al
Phys. Stat. Solidi (c) 5 (2008) 1980-1982
太陽電池
題名 発表者 発表先
III-V族、III族窒化物半導体の太陽電池解析
STR Group
http://www.str-soft.co.jp/dataimge/
1363849085.pdf
Assessment of factors limiting conver¬sion efficiency of single-junction III-nitride solar cells K. A. Bulashevich, et al Phys. Stat. Solidi (c) 11, (2014) 640-643.
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