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題名 発表者
(所属)
発表先 成長法 結晶 デバイス 関連製品 発表年 発表方法
Multi-scale model for optimization of HfO2 ALD in high aspect ratio structures Ivan Petras AVS 26th International Conference on Atomic Layer Deposition (ALD 2026) featuring the 13th International Atomic Layer Etching Workshop (ALE 2026) ALD HfO2 - - 2026 学会発表
Enhancement of Crystal growth Modeling with Machine learning (Tentative). Andrey Smirnov
(STR Belgrade)
The 9th International Symposium on Advanced Science and Technology of Silicon and Related Materials Cz Si - CGSim 2026 学会発表
(招待講演)
Multiscale Modeling of SiGe-based Device Processing. Yury Shustrov
(STR Belgrade)
SISPAD 2026 - SiGe - - 2026 学会発表
(招待講演)
Control of PCD formation on SCD during high-pressure MPCVD Ivan Petras
(STR Belgrade)
Hasselt Diamond Workshop 2026 MPCVD Diamond - DiaDeMo 2026 学会発表
Analysis of key factors affecting selectivity and conformality of lateral Si/SiGe stack etching Anton Kobelev
(STR Belgrade)
The International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025) - Si/SiGe - - 2025 学会発表
Growth Kinetics and Thickness Uniformity During 200 mm Ge Epitaxy in Horizontal Flow Reactor Andrey Smirnov
(STR Belgrade)
The International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025) CVD Ge - CVDSim3D 2025 学会発表
MPCVD法によるダイヤモンドエピタキシャル成長の数値解析 向山 裕次
(STR Japan)
第38回計算力学講演会
(CMD2025)
MPCVD Diamond - DiaDeMo 2025 学会発表
3D Modeling of 300 mm Cz Si Growth in an Asymmetric Furnace with Applied Horizontal Magnetic Field Aleksa Crnobrnja
(STR Belgrade)
21st International Conference on Crystal Growth and Epitaxy
(ICCGE-21)
Cz Si - CGSim 2025 学会発表
Resistivity Uniformity Analysis in FZ Si Growth Using 3D Modeling Petar Jovanovic
(STR Belgrade)
21st International Conference on Crystal Growth and Epitaxy
(ICCGE-21)
Cz Si - CGSim 2025 学会発表
Effect of light polarization on light extraction efficiency of deep-ultraviolet light-emitting diodes Kirill Bulashevich
(STR Belgrade)
15th International Conference on Nitride Semiconductors (ICNS-15) - - LED RATRO 2025 学会発表
Effect of Current Spreading on the Operation of Nitride-Based Broad-Area Stacked Laser Diodes with a Tunnel Junction Olga Soboleva
(STR Belgrade)
15th International Conference on Nitride Semiconductors (ICNS-15) - - Laser SpeCLED3D 2025 学会発表
Limitations of distributed polarization doping using in AlGaN-based deep-ultraviolet laser diode structures by their cracking during growth Mikhail Rudinsky
(STR Belgrade)
15th International Conference on Nitride Semiconductors (ICNS-15) MOCVD AlGaN Laser STREEM AlGaN 2025 学会発表
Improved Uniformity of Diamond Growth Through the Modeling of MPCVD on the Large Area Substrates Ivan Petras
(STR Belgrade)
Hasselt Diamond Workshop 2025 MPCVD Diamond - DiaDeMo 2025 学会発表
Experimental and Numerical Analysis of Growth of Heteroepitaxial Diamond Using the MPCVD Method Yuji Mukaiyama
(STR Japan)
18th International Conference on New Diamond and Nano Carbons (NDNC 2025) MPCVD Diamond - DiaDeMo 2025 学会発表
結晶成長プロセスにおける熱・物質輸送の数値解析 向山 裕次
(STR Japan)
応用物理学会結晶工学分科会第29回結晶工学セミナー - - - - 2025 学会発表
(招待講演)
Effect of gas phase nucleation on diamond growth by plasma activated CVD Anton Kobelev
(STR Belgrade)
34th International Conference on Diamond and Carbon Materials MPCVD Diamond - DiaDeMo 2024 学会発表
3D modeling of EFG β- Ga2O3 crystal growth Andrey Smirnov
(STR Belgrade)
International Workshop on Gallium Oxide and Related Materials (IWGO 2024) EFG β-Ga2O3 - - 2024 学会発表
Modeling and validation of carbon incorporation in GaN epitaxial growth by MOVPE method Yuji Mukaiyama
(STR Japan)
The 14th International Conference on Nitride Semiconductors (ICNS-14) MOCVD GaN - Virtual Reactor 2023 学会発表
MOVPE法によるGaNエピタキシャル成長における炭素混入に関する数値解析とその評価 向山 裕次
(STR Japan)
第36回計算力学講演会 MOCVD GaN - Virtual Reactor 2023 学会発表
Investigation of the turbulent silicon melt flow in a model geometry under a horizontal magnetic field Andrey Smirnov
(STR Belgrade)
The 20th International Conference on Crystal Growth and Epitaxy (ICCGE-20) Cz Si - CGSim 2023 学会発表
Detailed model of diamond crystal growth by MPCVD Andrey Smirnov
(STR Belgrade)
The 20th International Conference on Crystal Growth and Epitaxy (ICCGE-20) MPCVD Diamond - DiaDeMo 2023 学会発表
Evaluation of Numerical Modeling on Constitutional Supercooling during Heavily Boron Doped Silicon Single Crystal Growth using Cz Method Yuji Mukaiyama
(STR Japan)
The 20th International Conference on Crystal Growth and Epitaxy (ICCGE-20) Cz Si - CGSim 2023 学会発表
Numerical Modeling on spiral formation of Cz-β-Ga2O3 crystal growth considering solidification kinetic effect Masaya Iizuka
(STR Japan)
The 20th International Conference on Crystal Growth and Epitaxy (ICCGE-20) Cz β-Ga2O3 - CGSim 2023 学会発表
Modeling of Silicon Epitaxy on 300 mm Wafers and Analysis of Thickness Uniformity at Different Scales Andrey Smirnov
(STR Belgrade)
The International Conference on Silicon Epitaxy and Heterostructures / International SiGe Technology and Device Meeting CVD Si - CVDSim3D 2023 学会発表
Numerical Modeling and Evaluation of Constitutional Supercooling during Silicon Single Crystal Growth by Cz Method Yuji Mukaiyama
(STR Japan)
第8回シリコン材料の先端科学と技術国際シンポジウム Cz Si - CGSim 2022 学会発表
Numerical study of spiral formation of crystal during β-Ga2O3 crystal growth
using Czochralski method
Masaya Iizuka
(STR Japan)
International Workshop on Gallium Oxide and Related Materials (IWGO 2022) Cz β-Ga2O3 - CGSim 2022 学会発表
数値解析によるCz法ヘビードープシリコン単結晶成長時の成長界面における点欠陥生成挙動に関する研究 向山 裕次
(STR Japan)
第83回応用物理学会秋季学術講演会 Cz Si - CGSim 2022 学会発表
Advanced Modeling of Melt Turbulence, Impurities and Bubble Transport in Cz Silicon Crystal Growth Vladimir Artemyev
(STR Belgrade)
8th International Workshop on Crystal Growth Technology (IWCGT-8) Cz Si - CGSim 2022 学会発表
Cz法シリコン単結晶成長時の組成的過冷却に関する数値解析とその評価 向山 裕次
(STR Japan)
第69回応用物理学会春季学術講演会 Cz Si - CGSim 2022 学会発表

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